Analysis of Voltage Contrast in Secondary Electron Image using High Energy Electron Spectrometer
Analysis of Voltage Contrast in Secondary Electron Image using High Energy Electron Spectrometer
Monday, November 11, 2019: 4:00 PM
D 137/138 (Oregon Convention Center)
Summary:
The Voltage contrast (VC) observation using Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) is a common failure analysis technique for semiconductor devices. This VC information allows understanding of failure localization issues. In general, the VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8 to 2.0 kV in SEM. In this study, we aimed to find the optimized electron energy range for VC acquisition using Auger Electron Spectroscopy (AES) for quantitative understanding.
The Voltage contrast (VC) observation using Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) is a common failure analysis technique for semiconductor devices. This VC information allows understanding of failure localization issues. In general, the VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8 to 2.0 kV in SEM. In this study, we aimed to find the optimized electron energy range for VC acquisition using Auger Electron Spectroscopy (AES) for quantitative understanding.