Analysis of Voltage Contrast in Secondary Electron Image using High Energy Electron Spectrometer

Monday, November 11, 2019: 4:00 PM
D 137/138 (Oregon Convention Center)
Ms. Natsuko Asano , JEOL Ltd., Akishima, Tokyo, Japan
Dr. Shunsuke Asahina , JEOL Ltd., Akishima, Tokyo, Japan
Dr. Natasha Erdman , JEOL USA Inc., Peabody, MA


The Voltage contrast (VC) observation using Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB) is a common failure analysis technique for semiconductor devices. This VC information allows understanding of failure localization issues. In general, the VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8 to 2.0 kV in SEM. In this study, we aimed to find the optimized electron energy range for VC acquisition using Auger Electron Spectroscopy (AES) for quantitative understanding.
See more of: Microscopy
See more of: Technical Program