GHz-Scanning Acoustic Microscopy combined with ToF-SIMS/AFM for wafer-level failure analysis of bonding interfaces.
GHz-Scanning Acoustic Microscopy combined with ToF-SIMS/AFM for wafer-level failure analysis of bonding interfaces.
Monday, November 11, 2019: 3:35 PM
F 150/151 (Oregon Convention Center)
Summary:
This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and the application to the study of the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample. In the current study this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface but also a well-controlled local thinning (size, depth and roughness).
This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and the application to the study of the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample. In the current study this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface but also a well-controlled local thinning (size, depth and roughness).