GHz-Scanning Acoustic Microscopy combined with ToF-SIMS/AFM for wafer-level failure analysis of bonding interfaces.

Monday, November 11, 2019: 3:35 PM
F 150/151 (Oregon Convention Center)
Prof. Ingrid De Wolf , imec, Leuven, Belgium
Mr. Ahmad Khaled , imec, Leuven, Belgium
Dr. Alexis Franquet , imec, Leuven, Belgium
Dr. Valentina Spampinato , imec, Leuven, Belgium
Dr. Thierry Conard , imec, Leuven, Belgium
Dr. Sebastian Brand , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany
Mr. Michael Kögel , Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany
Mr. Ingo Wiesler , PVA Tepla Analytical Systems GmbH, Westhausen, Germany

Summary:

This paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool and the application to the study of the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample. In the current study this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface but also a well-controlled local thinning (size, depth and roughness).