Site-specific Low Angle Plasma FIB Milling for Cross-sectional Electrical Characterization
Site-specific Low Angle Plasma FIB Milling for Cross-sectional Electrical Characterization
Thursday, November 14, 2019: 9:15 AM
F 150/151 (Oregon Convention Center)
Summary:
This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low incident angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristics signals from the specific site on the cross-section of the device, including imaging of junctions, Fins at transistor level and electrical probing of interconnect metal traces.
This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low incident angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristics signals from the specific site on the cross-section of the device, including imaging of junctions, Fins at transistor level and electrical probing of interconnect metal traces.