Localizing IC Defect Using Nanoprobing: A 3D Approach
Localizing IC Defect Using Nanoprobing: A 3D Approach
Tuesday, November 12, 2019: 4:10 PM
F 150/151 (Oregon Convention Center)
Summary:
This paper presents a novel 3D approach of nanoprobing for defect localization in flip-chip CMOS IC devices. By combining backside deprocessing and cross-sectioning, the device becomes accessible for electrical nanoprobing and physical characterization from all directions. This technique allows comprehensive defect localization and enables root-cause identification on challenging failures.
This paper presents a novel 3D approach of nanoprobing for defect localization in flip-chip CMOS IC devices. By combining backside deprocessing and cross-sectioning, the device becomes accessible for electrical nanoprobing and physical characterization from all directions. This technique allows comprehensive defect localization and enables root-cause identification on challenging failures.