SCANNING PROBE ANALYSIS: Inspection of charge effect on metal layer by using SCM

Wednesday, November 2, 2022
Exhibit Halls A & B (Pasadena Convention Center)
Mr. Lee Gyubaek , samsung electronics / Foundry division, Hwaseong-si, Korea, Republic of (South)

Summary:

In this paper, we have measured and interpreted SCM response in MIM to verify charge effect, providing physical model and additional material analysis by sMIM. And this is reasonable enough to be applicable in the fab because it was already proved by compensation condition. Thus, it is expected to be good solution for plasma damage inspection in a fab as well since dC/dV of SCM is verified to be more sensitive than Kelvin probe method like CPD in this study. The reason is DC-EFM is already amplified from difference of potential between sample and tip by AC bias. Physically, it is interpreted that as dC/dV is dynamic variation of capacitance, it is more effective and sensitive to inspect the change induced by surface charge than static electric force itself.