Electrooptical interactions in FinFETs

Thursday, November 3, 2022: 2:55 PM
Ballroom A (Pasadena Convention Center)
Dr. Venkat Ravikumar , Advanced Micro Devices - Singapore Pte Ltd, Singapore, Singapore
Mr. Jin Jie , Advanced Micro Devices - Singapore Pte Ltd, Singapore, Singapore
Mr. Vasanth Somasundaram , Advanced Micro Devices - Singapore Pte Ltd, Singapore, Singapore
Dr. Ray J.H. Ng , Institute of High Performance Computing, Singapore, Singapore
Prof. Joel JKW Yang , Singapore University of Technology and Design, Singapore, Singapore
Prof. KL Pey , SIngapore University of Technology and Design, Singapore, Singapore

Summary:

Electrooptical investigations such as laser voltage probing (LVP) and dynamic laser stimulation (DLS) are very popular electrical fault isolation techniques (EFI) that uses lasers on semiconductor circuits to study the functionality of transistors while the device is in operation. While many studies have been undertaken to understand interaction between laser and planar devices, three-dimensional devices such as FinFETs have interesting physiologies that have not been fully explored. In this work, we study the interaction of polarized light with the n-type metal oxide semiconductor (NMOS) FinFETs, experimentally and through Multiphysics simulations. We report highly directional electrooptical interactions in the FinFET. LVP signals are stronger when the laser used is polarized parallel to the fin and laser stimulation stronger when the laser used is polarized parallel to the gate. These findings affect future laser stimulation and probing investigations for EFI.
See more of: Die Level Fault Isolation
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