FIB-SIMS in FIB-SEMs: Practical Aspects for Physical Failure Analysis
FIB-SIMS in FIB-SEMs: Practical Aspects for Physical Failure Analysis
Thursday, November 3, 2022: 2:40 PM
Ballroom B (Pasadena Convention Center)
Summary:
Secondary ion mass spectrometry is a well-established method in semiconductor manufacturing process control and development for trace metal and organic contaminant detection, as well as for depth profiling of ultra-thin films and total dopant concentrations. Using a focused ion beam as the primary ion beam provides a versatile and highly sensitive analytical technique with lateral resolution down to a few tens of nanometers, an appropriate technique for targeted failure analysis on functional device structure. This paper presents an exemplary application to discuss practical aspects of using focused ion beam SIMS.
Secondary ion mass spectrometry is a well-established method in semiconductor manufacturing process control and development for trace metal and organic contaminant detection, as well as for depth profiling of ultra-thin films and total dopant concentrations. Using a focused ion beam as the primary ion beam provides a versatile and highly sensitive analytical technique with lateral resolution down to a few tens of nanometers, an appropriate technique for targeted failure analysis on functional device structure. This paper presents an exemplary application to discuss practical aspects of using focused ion beam SIMS.