CASE STUDIES: FA PROCESSES - Applications of PVC and Progressive FIB Milling in Identifying Top-down Invisible Defect on Advanced Nodes SRAM Devices

Wednesday, November 2, 2022
Exhibit Halls A & B (Pasadena Convention Center)
Mrs. Wiwy Wudjud , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Chan Dang , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Kah Chin Cheong , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Gregory B. Collins , Samsung Austin Semiconductor, LLC, Austin, TX
Mr. Christopher Penley , Samsung Austin Semiconductor, LLC, Austin, TX

Summary:

Passive voltage contrast (PVC) is a well-known fault isolation technique in differentiating contrast at via/metal/contact levels while focused ion beam (FIB) is a destructive technique specifically used for cross sectioning once a defect is identified. In this study, we highlight a combination technique of PVC and progressive FIB slicing on advanced node fin field-effect transistor (FinFET) for root cause analysis. This combo technique is useful when applied on high-density static random access memory (SRAM) structure, especially when it is difficult to view the defect from top-down inspection. In this paper, we create a FA flow chart and FIB deposition/slicing recipe for SRAM failure and successfully apply them to three case studies.