Optimization of annealing process conditions to reduce gate induced drain leakage current in Buried-Gate FETs.

Tuesday, November 1, 2022: 4:35 PM
Ballroom A (Pasadena Convention Center)
Mr. Youmin KIM , Sungkyunkwan University, Suwon, Korea, Republic of (South)
Mr. Donghbin kim , Sungkyunkwan University, Suwon, Korea, Republic of (South)
Prof. Byoungdeok Choi , Sungkyunkwan University, Suwon, Korea, Republic of (South)

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