Dr. Manuel Gonzáles Sentís

Ingénieur en Analyse de défaillance microélectronique
Centre National d'Etudes Spatiales (CNES)
Laboratories and Expertise, Quality Assurance
Toulouse France 31401

Papers:

Backside Fault Localization and defect physical analysis of degraded power HEMT p-GaN transistors stressed in DC and AC modes.