SRAM Single Bit Cell Soft Failure and Nano-probing Methods
SRAM Single Bit Cell Soft Failure and Nano-probing Methods
Friday, November 1, 2024: 8:00 AM
202 (Hilton San Diego Bayfront)
Summary:
As semiconductor technology continuously scales down, SRAM bit cell size and power supply voltage decrease, resulting in increased transistor strength variation and mismatch. SRAM single bit cell soft failure has become the main failure of SRAM. To evaluate the single bit cell soft failure and thus identify its root cause, electrical nano-probing is an indispensable measure. In this paper, after describing the 3 different types of SRAM bit cell soft failures, 2 electrical nano-probing methods was discussed and applied to analyze two case studies of SRAM single bit cell soft failure.
As semiconductor technology continuously scales down, SRAM bit cell size and power supply voltage decrease, resulting in increased transistor strength variation and mismatch. SRAM single bit cell soft failure has become the main failure of SRAM. To evaluate the single bit cell soft failure and thus identify its root cause, electrical nano-probing is an indispensable measure. In this paper, after describing the 3 different types of SRAM bit cell soft failures, 2 electrical nano-probing methods was discussed and applied to analyze two case studies of SRAM single bit cell soft failure.