Optimizations and Case Studies: Decapsulation of Hardened Epoxy SiC MOSFETs and Diodes via JIACO Microwave Induced Plasma Etching
Optimizations and Case Studies: Decapsulation of Hardened Epoxy SiC MOSFETs and Diodes via JIACO Microwave Induced Plasma Etching
Tuesday, October 29, 2024: 2:00 PM
The Pointe (Hilton San Diego Bayfront)
Summary:
This paper revolves around the effects of thermal modification on encapsulant compounds in SiC devices; specifically, the tendency for thermal modification to render the encapsulant highly resistant to conventional wet chemistry during decapsulation. The work aims to present a novel alternative for SiC decapsulation in the form of the JIACO Instruments MIP system, which has been determined to be potent at removing hardened encapsulants that conventional wet etches have little effect against. The paper also includes information about the extensive work being conducted by the authors to further optimize the decapsulation process and maximize the JIACO system's material removal rate.
This paper revolves around the effects of thermal modification on encapsulant compounds in SiC devices; specifically, the tendency for thermal modification to render the encapsulant highly resistant to conventional wet chemistry during decapsulation. The work aims to present a novel alternative for SiC decapsulation in the form of the JIACO Instruments MIP system, which has been determined to be potent at removing hardened encapsulants that conventional wet etches have little effect against. The paper also includes information about the extensive work being conducted by the authors to further optimize the decapsulation process and maximize the JIACO system's material removal rate.