Power Devices (Si, SiC, GaN)

Tuesday, October 29, 2024: 1:20 PM-2:50 PM
The Pointe (Hilton San Diego Bayfront)
Dr. Aidan Taylor, Infineon Technologies Austria AG and Dr. Baohua Niu, Carl Zeiss Semiconductor Manufacturing Technology Inc.,
1:20 PM
Removal of Highly Doped Silicon for Backside Fault Isolation with Fluorine-Based Etches
Mr. Kevin A. Distelhurst, BS/MS Electrical Engineering, GLOBALFOUNDRIES; Mr. Jim Densmore, GLOBALFOUNDRIES; Dr. Jiaqi Tang, JIACO Instruments
1:40 PM
Identification and characterization of conductive dislocations in p-GaN/AlGaN/GaN heterojunctions on GaN-on-Si substrates
Dr. Manuel Stabentheiner, Infineon Technologies Austria AG; Dominic Tilly, Infineon Technologies Austria AG; Tobias Schinnerl, Infineon Technologies Austria AG; Dr. Aidan Arthur Taylor, Infineon Technologies Austria AG; Paul Javernik, Infineon Technologies Austria AG; Michael Novak, Infineon Technologies Austria AG; Prof. Dionyz Pogany, TU Vienna; Dr. Clemens Ostermaier, Infineon Technologies Austria AG
2:00 PM
Optimizations and Case Studies: Decapsulation of Hardened Epoxy SiC MOSFETs and Diodes via JIACO Microwave Induced Plasma Etching
Mr. Connor J Sorrells, Microchip Technology, Inc.; Mr. Kyle E Nielsen, Microchip Technology, Inc.; Mr. Bret A Walters, Microchip Technology, Inc.; Dr. Jiaqi Tang, JIACO Instruments; Mr. Mark W McKinnon, JIACO Instruments
2:20 PM
Top-down junction analysis in SiC MOSFET
Mr. Greg Johnson, Zeiss Microscopy; Dr. Pietro Paolo Barbarino, STMicroelectronics; Mr. Andreas Rummel, Kleindiek Nanotechnik GmbH; Mr. Giuseppe Sciuto, STMicroelectronics; Mr. Massimiliano Astuto, STMicroelectronics; Mr. Giancarlo Calvagno, STMicroelectronics; Dr. Roberta Ricciari, STMicroelectronics
See more of: Technical Program
<< Previous Session | Next Session >>