Localization of Subtle Front-End FinFET Defects Using EBIC
Localization of Subtle Front-End FinFET Defects Using EBIC
Tuesday, October 29, 2024: 3:40 PM
202 (Hilton San Diego Bayfront)
Summary:
In this work, we present a case which highlights the effectiveness of using top-down and cross-section electron beam induced current imaging (EBIC) in an SEM nanoprobe system to localize subtle front-end defects in an advanced FinFET technology. We used EBIC to localize a novel fin nano-crack defect which had evaded all prior TEM imaging attempts. This was a subtle, systematic resistive pMOS failure which was only visible when testing memory arrays at 150C. The discussed techniques also offer an SEM based alternative to methods such as scanning capacitance microscopy for isolating dopant anomalies and other subtle defects. The presented cross-section sample preparation and EBIC methods can easily be applied to a wide range of other CMOS technologies.
In this work, we present a case which highlights the effectiveness of using top-down and cross-section electron beam induced current imaging (EBIC) in an SEM nanoprobe system to localize subtle front-end defects in an advanced FinFET technology. We used EBIC to localize a novel fin nano-crack defect which had evaded all prior TEM imaging attempts. This was a subtle, systematic resistive pMOS failure which was only visible when testing memory arrays at 150C. The discussed techniques also offer an SEM based alternative to methods such as scanning capacitance microscopy for isolating dopant anomalies and other subtle defects. The presented cross-section sample preparation and EBIC methods can easily be applied to a wide range of other CMOS technologies.