Combining Electrical Fault Isolation and Characterization Inside an SEM to Locate and Characterize Gate Leakages on a 3 nm Device
Combining Electrical Fault Isolation and Characterization Inside an SEM to Locate and Characterize Gate Leakages on a 3 nm Device
Friday, November 1, 2024: 8:40 AM
202 (Hilton San Diego Bayfront)
Summary:
By scanning areas with probe needles we visualize 3nm gates with sub pA resolution, do probing, EBAC, EBIC, EBRICH using a probing system without hardware modification. Results: - Identifying leaking gates out of 50 - 100 with one scan on 3 nm technology - Characterizing 50 - 100 gates with sub pA resolution with one scan on 3 nm technology - No hardware modification necessary - No sample damage even at the smallest currently available technologies - Fast failure location by combining current imaging and EBIRCH - Electron beam is switched off during scanning to avoid sample damage by electron beam
By scanning areas with probe needles we visualize 3nm gates with sub pA resolution, do probing, EBAC, EBIC, EBRICH using a probing system without hardware modification. Results: - Identifying leaking gates out of 50 - 100 with one scan on 3 nm technology - Characterizing 50 - 100 gates with sub pA resolution with one scan on 3 nm technology - No hardware modification necessary - No sample damage even at the smallest currently available technologies - Fast failure location by combining current imaging and EBIRCH - Electron beam is switched off during scanning to avoid sample damage by electron beam