Imaging Nanoscale Electronic Changes in a Biased GaN HEMT
Imaging Nanoscale Electronic Changes in a Biased GaN HEMT
Thursday, October 31, 2024: 10:40 AM
202 (Hilton San Diego Bayfront)
Summary:
PFIB preparation and STEM EBIC imaging are used to make and study an electrically contacted cross section extracted from a GaN HEMT. Nanoscale, bias-induced electronic changes are mapped during normal biasing conditions, during stressing, and after failure, all performed in the TEM.
PFIB preparation and STEM EBIC imaging are used to make and study an electrically contacted cross section extracted from a GaN HEMT. Nanoscale, bias-induced electronic changes are mapped during normal biasing conditions, during stressing, and after failure, all performed in the TEM.