Microscopy Analysis and Material Characterization

Thursday, October 31, 2024: 10:00 AM-11:20 AM

202 (Hilton San Diego Bayfront)

Ms. Seraina Murphy, Jet Propulsion Laboratory and Dr. Cecile Bonifacio, E.A. Fischione Instruments, Inc.

10:00 AM

The Impact of Varying TEM Accelerating Voltage on Elemental Analysis of Semiconductor Defects
Mr. Jacob Levenson, NXP Semiconductors; Dr. Sam Subramanian, NXP Semiconductors; Mrs. Khiem Ly, NXP Semiconductors; Mr. Tony Chrastecky, NXP Semiconductors; Mr. Eric Yi, NXP Semiconductors

10:20 AM

Advancing quantitative failure analysis and strain measurements at the nanoscale by using scanning electron diffraction microscopy enhanced by beam precession
Mr. Tomáš Morávek, TESCAN Group; Dr. Eduardo Serralta, TESCAN Group; Mr. Lukáš Hladík, TESCAN Group; Mr. Robert Stroud, Tescan USA; Dr. Narendraraj Chandran, TESCAN Group; Dr. Daniel Nemecek, TESCAN Group

10:40 AM

Imaging Nanoscale Electronic Changes in a Biased GaN HEMT
Dr. William Hubbard, PhD, NanoElectronic Imaging, Inc.; Prof. B.C. Regan, University of California, Los Angeles

11:00 AM

Unlocking Insights into 3D Transistor Defects: The Power of Supplementing TEM with Elemental Electron Tomography
Dr. Yu Zhang, Global Foundries; Mr. Kevin Davidson, Global Foundries; Dr. Po-Cheng Lu, Global Foundries; Dr. Frieder Baumann, Global Foundries; Mr. Travis Mitchell, Global Foundries

See more of: Technical Program