Unlocking Insights into 3D Transistor Defects: The Power of Supplementing TEM with Elemental Electron Tomography
Unlocking Insights into 3D Transistor Defects: The Power of Supplementing TEM with Elemental Electron Tomography
Thursday, October 31, 2024: 11:00 AM
202 (Hilton San Diego Bayfront)
Summary:
Extending TEM with 3D elemental electron tomography enabled efficient analysis of complex defects in FinFET transistors, resulting in comprehensive understanding of the root cause for abnormally high non-linear leakage current. This underscores the effectiveness of supplementing TEM with 3D electron tomography for gaining crucial insights into semiconductor device failures.
Extending TEM with 3D elemental electron tomography enabled efficient analysis of complex defects in FinFET transistors, resulting in comprehensive understanding of the root cause for abnormally high non-linear leakage current. This underscores the effectiveness of supplementing TEM with 3D electron tomography for gaining crucial insights into semiconductor device failures.