Novel Backside IC preparation stopping on STI with full circuit functionality using Chemical Mechanical Polishing (CMP) with highly selective slurry
Novel Backside IC preparation stopping on STI with full circuit functionality using Chemical Mechanical Polishing (CMP) with highly selective slurry
Tuesday, October 29, 2024: 4:00 PM
204 (Hilton San Diego Bayfront)
Summary:
Mechanical sample preparation is a crucial and indispensable step in modern failure analysis (FA). Traditional methods excel in reducing bulk silicon to thicknesses of several tens of micrometers. However, contemporary demands necessitate sample preparation below 10 µm or even below 5 µm, which is challenging, time-consuming, and requires an expensive toolset and advanced operator expertise. Existing methods, which rely on mechanical components for bulk removal, induce mechanical stress and microcracks that can alter the electrical characteristics of the sample. Maintaining the sample's electrical behavior is essential for accurate FA. This paper introduces a novel approach to sample preparation that employs concepts from wafer-level chemical mechanical polishing (CMP). This method ensures reliable sample preparation without introducing microcracks, accurately halts material removal at the shallow trench isolation (STI) – or deep STI - level, and maintains the sample's electrical functionality. The proposed approach is discussed in detail, including successful thinning of various sample types to the STI level, which were subsequently tested for electrical functionality.
Mechanical sample preparation is a crucial and indispensable step in modern failure analysis (FA). Traditional methods excel in reducing bulk silicon to thicknesses of several tens of micrometers. However, contemporary demands necessitate sample preparation below 10 µm or even below 5 µm, which is challenging, time-consuming, and requires an expensive toolset and advanced operator expertise. Existing methods, which rely on mechanical components for bulk removal, induce mechanical stress and microcracks that can alter the electrical characteristics of the sample. Maintaining the sample's electrical behavior is essential for accurate FA. This paper introduces a novel approach to sample preparation that employs concepts from wafer-level chemical mechanical polishing (CMP). This method ensures reliable sample preparation without introducing microcracks, accurately halts material removal at the shallow trench isolation (STI) – or deep STI - level, and maintains the sample's electrical functionality. The proposed approach is discussed in detail, including successful thinning of various sample types to the STI level, which were subsequently tested for electrical functionality.