Advancing quantitative failure analysis and strain measurements at the nanoscale by using scanning electron diffraction microscopy enhanced by beam precession
Advancing quantitative failure analysis and strain measurements at the nanoscale by using scanning electron diffraction microscopy enhanced by beam precession
Thursday, October 31, 2024: 10:20 AM
202 (Hilton San Diego Bayfront)
Summary:
The role of scanning transmission electron microscopy (STEM) in failure analysis has been growing since the recent and next generation devices are becoming smaller and more complex. Scanning electron diffraction (4D-STEM) measurements advance the conventional STEM imaging and EDX mapping techniques by providing structural information that enables phase and orientation mapping of crystalline and amorphous phases. Enhancement of electron diffraction data by beam precession is then fundamental for higher accuracy and precision, especially in the case of strain measurements. These advanced electron diffraction measurements now become available to a broad range of users due to unprecedented high levels automation and synchronization in the new analytical STEM instrument, TESCAN TENSOR. The power of precession-assisted 4D-STEM analysis is demonstrated on the case of defects in Ge-rich GST layer and measurement of tensile and compressive strain in a 5-nm Samsung node.
The role of scanning transmission electron microscopy (STEM) in failure analysis has been growing since the recent and next generation devices are becoming smaller and more complex. Scanning electron diffraction (4D-STEM) measurements advance the conventional STEM imaging and EDX mapping techniques by providing structural information that enables phase and orientation mapping of crystalline and amorphous phases. Enhancement of electron diffraction data by beam precession is then fundamental for higher accuracy and precision, especially in the case of strain measurements. These advanced electron diffraction measurements now become available to a broad range of users due to unprecedented high levels automation and synchronization in the new analytical STEM instrument, TESCAN TENSOR. The power of precession-assisted 4D-STEM analysis is demonstrated on the case of defects in Ge-rich GST layer and measurement of tensile and compressive strain in a 5-nm Samsung node.