Top-down junction analysis in SiC MOSFET

Tuesday, October 29, 2024: 2:20 PM
The Pointe (Hilton San Diego Bayfront)
Mr. Greg Johnson , Zeiss Microscopy, Poughkeepsie, NY
Dr. Pietro Paolo Barbarino , STMicroelectronics, catania, Italy
Mr. Andreas Rummel , Kleindiek Nanotechnik GmbH, Reutlingen, Baden-Württemberg, Germany
Mr. Giuseppe Sciuto , STMicroelectronics, catania, Italy
Mr. Massimiliano Astuto , STMicroelectronics, catania, Italy
Mr. Giancarlo Calvagno , STMicroelectronics, Catania, Italy
Dr. Roberta Ricciari , STMicroelectronics, catania, Italy

Summary:

Demonstrated ability to see p/n junctions in SiC MOSFET wo/ gate removal
See more of: Power Devices (Si, SiC, GaN)
See more of: Technical Program