Consideration of a Ga-FIB in Lamella Sample Prep for EBIC/EBAC Analysis of Advanced-node SRAMs
Consideration of a Ga-FIB in Lamella Sample Prep for EBIC/EBAC Analysis of Advanced-node SRAMs
Friday, November 1, 2024: 9:40 AM
202 (Hilton San Diego Bayfront)
Summary:
We present an experiment to understand the possible detrimental effects of processing SRAM samples with gallium-focused ion beams (Ga-FIB) prior to electron beam-induced and absorbed current (EBIC and EBAC) characterization. To understand the magnitude of sample surface amorphization upon the ability to collect EBAC measurements, a lamella was prepared with different areas of increasingly improved polish, followed by EBIC measurements at 1 and 2 kV beam landing energy
We present an experiment to understand the possible detrimental effects of processing SRAM samples with gallium-focused ion beams (Ga-FIB) prior to electron beam-induced and absorbed current (EBIC and EBAC) characterization. To understand the magnitude of sample surface amorphization upon the ability to collect EBAC measurements, a lamella was prepared with different areas of increasingly improved polish, followed by EBIC measurements at 1 and 2 kV beam landing energy