Removal of Highly Doped Silicon for Backside Fault Isolation with Fluorine-Based Etches

Tuesday, October 29, 2024: 1:20 PM
The Pointe (Hilton San Diego Bayfront)
Mr. Kevin A. Distelhurst, BS/MS Electrical Engineering , GLOBALFOUNDRIES, Essex Jct., VT
Mr. Jim Densmore , GLOBALFOUNDRIES, Essex Jct., VT
Dr. Jiaqi Tang , JIACO Instruments, Delft, Netherlands

Summary:

Utilizing plasma based etches to selectively remove highly doped Si obscuring backside fault isolation and enabling additional analyses through the backside.
See more of: Power Devices (Si, SiC, GaN)
See more of: Technical Program