Invited Talk: Daljin Yoon, SK hynix Inc., presents, "A Study on the corrosion mechanism and effective factors in front and back end process of NAND".
Title: “A Study on the corrosion mechanism and effective factors in front and back end process of NAND”
Abstract:
During HAST evaluation, which is the most severe reliability evaluation of electronic packages, electrical failure frequently occur due to the corrosion phenomenon. This corrosion often occurs in the interconnection area of dissimilar materials such as Au/Cu Wire and Al/Cu Pad, and external factors such as voltage and moisture absorption have been identified as the cause of the corrosion mechanism. However, as the structure and materials of electronic packages are becoming lighter, thinner, shorter, and more sophisticated, it is necessary to consider the causes of corrosion from the perspective of internal factors. The two effective factors causing corrosion in the HAST evaluation of electronic packages were achieved as Cl and Al pad grain size, respectively. Cl in EMC was eluted as ions during the HAST evaluation, and accelerated corrosion in Al Pad and Au4Al IMC area, so management Cl in package materials is very important. Second, the microstructure characteristics of Al Pad are different depending on the heat treatment method, and grain size typically affects the occurrence of corrosion. In this study, we discuss the corrosion acceleration mechanism of Cl and grain size, and discuss ways to improve it.
Biography:
DalJin Yoon received master and ph.D degrees from the KAIST(Korea Advanced Institutes of Science and Technology) in South Korea. The major research of his ph.D is interconnection technology for electronic packages with ultrafine pitch. Currently, he is working as FA engineer of HBM at SKhynix, and conducting research to identify failure mechanism in various reliability environments and to implement high reliability characteristics
Yan Li, Samsung