Sample Preparation and Device De-processing - Detection of buried defects at gate level in silicon-based semiconductor components: An cost-effective Approach
Sample Preparation and Device De-processing - Detection of buried defects at gate level in silicon-based semiconductor components: An cost-effective Approach
Wednesday, November 19, 2025
Summary:
High reliability is one of the key factors for electronic components used for space application. Generally lower end of the technology node is preferred as functionality of these components are proven for a decade or so. These components need to undergo strict compliances of screening and qualification test as per military and space standard to weed out infant mortality failures before using in spacecraft. Then different environmental tests at card level, box level, sub system level. etc. are carried out to weed out stress related failures. In spite of performing these qualification tests, certain components fail at one or other stages of testing. Therefore, it is necessary to understand root cause of these failures and initiate appropriate corrective actions. Quite often, the defects generated could be in the buried layers such as gate level of the semiconductor components. These defects can not be captured by optical or electron microscope. There is need for quick and cost-effective method for controlled removal of layers and access the defects at gate level in silicon-based semiconductor components. The present work describes cost-effective chemical etch method, which is used to capture defects at gate level.
High reliability is one of the key factors for electronic components used for space application. Generally lower end of the technology node is preferred as functionality of these components are proven for a decade or so. These components need to undergo strict compliances of screening and qualification test as per military and space standard to weed out infant mortality failures before using in spacecraft. Then different environmental tests at card level, box level, sub system level. etc. are carried out to weed out stress related failures. In spite of performing these qualification tests, certain components fail at one or other stages of testing. Therefore, it is necessary to understand root cause of these failures and initiate appropriate corrective actions. Quite often, the defects generated could be in the buried layers such as gate level of the semiconductor components. These defects can not be captured by optical or electron microscope. There is need for quick and cost-effective method for controlled removal of layers and access the defects at gate level in silicon-based semiconductor components. The present work describes cost-effective chemical etch method, which is used to capture defects at gate level.