Poster Session

Wednesday, November 19, 2025: 3:00 PM-4:00 PM
Exhibit Hall A&B (Pasadena Convention Center)
Product Yield, Test and Diagnostics - Debug Methodology for Resolving Reset Failures in Chipset Using Optical and Physical Probing Techniques
Ms. Shen Shen Lee, Altera Corporation; Ms. Lay Hoon Loh, Intel Microelectronics (M) Sdn Bhd; Mr. Wee Sun Voon, Altera Coorporation; Mr. Yew Meng Wong, Intel Microelectronics (M) Sdn. Bhd.; Ms. Yiang Won Chai, Intel Microelectronics (M) Sdn. Bhd.; Ms. Nur Aqilah Nor Azman, Intel Microelectronics (M) Sdn. Bhd.
Product Yield, Test and Diagnostics - Optimizing Diagnosis Workload with Dynamic Partitioning-Based Scan Diagnosis
Mr. Preston McWithey, Siemens; Ms. Shaleen Acharya, Siemens; Jayant D'Souza, Siemens
Die Level Fault Isolation - Failure Defect Modeling and Offset Voltage Calculator to determine the Effect of PMOS Threshold Voltage Shift and Resistance Mismatch of Segmented Digital-to-Analog Converter
Mr. Arnulfo Evangelista, Analog Devices Inc; Mrs. Janella Igtiben, Analog Devices Inc; Mr. Ryan Ordiales, Analog Devices Inc
Die Level Fault Isolation - Lateral Resolution Improvement of Lock-in OBIRCH by Deconvoluting Heat Diffusion
Dr. Norimichi Chinone, Hamamatsu Corporation
Microscopy Analysis and Material Characterization - High-Resolution Ion Microscopy and SIMS Nanoanalytics for Microelectronics Applications
Dr. Peter Gnauck, Raith GmbH; Mr. Torsten Richter, Raith GmbH; Dr. Alexander Ost, Raith GmbH
Microscopy Analysis and Material Characterization - Multimodal In Situ Electron Microscopy Platform for Correlative Electro-Thermal Characterization and Failure Analysis
Dr. Hongkui Zheng, DENSsolutions; Dr. Yevheniy Pivak, DENSsolutions; Mr. Christian Deen-van Rossum, DENSsolutions; Dr. Mia Andersen, DENSsolutions; Merijn Pen, DENSsolutions; Shibabrata Basak, Institute of Energy Technologies - Fundamental Electrochemistry (IET-1), Forschungszentrum Jülich GmbH; Rüdiger-A Eichel, Institute of Energy Technologies - Fundamental Electrochemistry (IET-1), Forschungszentrum Jülich GmbH; Hugo Pérez Garza, DENSsolutions
Microscopy Analysis and Material Characterization - Streamlining Accurate 4D-STEM Phase-Orientation Analysis of Polymorphic Polycrystalline Thin Films in Semiconductor TEM Labs for Routine Application
Dr. Daniel Nemecek, TESCAN Group; Ms. Tiantian Chai, University of Leeds; Dr. Zabeada Aslam, University of Leeds; Prof. Andy Brown, University of Leeds; Prof. Rik Drummond-Brydson, University of Leeds; Dr. Gregory Burwell, Swansea University; Prof. Paul Meredith, Swansea University
FA Process: Fault Isolation, Mechanisms, & Solutions - Analysis of joint misalignment defects on multi-tier 3D NAND
Anita Poudel, Sandisk Corporation
FA Process: Fault Isolation, Mechanisms, & Solutions - Root cause analysis of Rapid Thermal Process contamination using FIB-SEM nanoprobe characterization
Mr. David Macmahon, Micron Technology; Mrs. Samantha Spangler, Micron Technology; Riley Christopher, Micron Technology; Dave Moore, Micron Technology; Joe Gilyard, Micron Technology; Kee Hui Foo, Micron Technology; Bhavani Maddipoti, Micron Technology
Microscopy Analysis and Material Characterization - Thermoreflectance microscopy for the steady-state and transient thermal analysis of semiconductor devices
Dr. Ki Soo Chang, Korea Basic Science Institute
Microscopy Analysis and Material Characterization - Unraveling the Ni Multi-Moon Issue: A Cross-Functional Approach to Expose and Analyze Subsurface Defects
Dr. Yu Zhang, Global Foundries; Gregory Marks, Global Foundries; Esther Chen, GlobalFoundries; Daewon Yang, GlobalFoundries; Jongsuk Park, GlobalFoundries; Kyle Cogswell, GlobalFoundries; Nick Sobolew, GlobalFoundries; Dr. C.Q. Chen, Globalfoundries Singapore Pte Ltd.
Die Level Fault Isolation - Failure Analysis of a 2nm device with BSPDN Architecture Using an Electron Beam Probing
Mr. Yin Lung Ke, TSMC; Mr. Samson Tsai, Thermofisher Sicentific; Mr. J.H. Lin, TSMC
Die Level Fault Isolation - Die-Level Defect Localization of Super Power Rail Using Dynamic Lock-In Thermography
Mrs. Yi-Hua Huang, Taiwan Semiconductor Manufacturing Company Limited; Mr. Samson Tsai, Thermofisher Sicentific; Mr. Kazuyuki Li, Taiwan Semiconductor Manufacturing Company Limited
Die Level Fault Isolation - 3D VNAND Fault Isolation Method using Lock-In OBIRCH
Ms. Hyeongki Kim, Samsung Electronics; Mr. Akihito Uchikado, Hamamatsu Photonics K.K.; Dr. Norimichi Chinone, Hamamatsu Photonics K.K.; Mr. Yunki Jung, Samsung Electronics
AI Applications for Failure Analysis - Grain size analysis by differential phase contrast (DPC)- scanning transmission electron microscopy (STEM) and artificial intelligence (AI) segmentation
Dr. Chen Li, Thermo Fisher Scientific; Dr. Chu-Ping Yu, Thermo Fisher Scientific; Dr. Chunhua Tang, Thermo Fisher Scientific; Dr. Dominique Delille, Thermo Fisher Scientific; Mr. Michael Strauss, ThermoFisher Scientific; Dr. Xiangyu Zhu, University of Texas
AI Applications for Failure Analysis - A Novel Approach to Multivariate Time-series Anomaly Detection and Correlation analysis for In-fab Metrology Data
Ms. Youngeun Kim, Samsung Electronics; Mr. Hyunmin Kim, Samsung Electronics; Mr. Hyoungjun Kim, Samsung Electronics
AI Applications for Failure Analysis - AI-Driven Anomaly Detection in Electron Microscopy Images of Periodic Circuit Structures
Dr. Alexey Solovey, NVIDIA Corporation; Dr. Chuan Zhang, NVIDIA Corporation; Mr. Jonathon Elliott, NVIDIA Corporation; Mr. Mikhail Filimonov, NVIDIA Corporation; Dr. Jane Y. Li, NVIDIA Corporation
Microscopy Analysis and Material Characterization - Live Imaging of Radiation-Induced Electronic Damage with STEM EBIC
Dr. William Hubbard, PhD, NanoElectronic Imaging, Inc.; Prof. B.C. Regan, University of California, Los Angeles
Microscopy Analysis and Material Characterization - ECCI imaging of epitaxial GaN with conventional FE-SEM
Ms. Hyun Hwa Kim, Carl Zeiss Microscopy; Mr. Greg Johnson, Carl Zeiss Microscopy; Dr. Thomas Rodgers, Carl Zeiss Microscopy
Package Level Fault Isolation - Embedded Deep Trench Capacitor (DTC) Failure Analysis Methodolgy
Mr. kan sun, Qualcomm; Mr. Hu hao, Qualcomm; Mr. Cheng Hoe lee, Qualcomm; Mr. Chua Tze ping, Qualcomm; Mrs. Lim Jye Pine, Qualcomm
Emerging FA Techniques and Concepts - Open Failure LiT Localization Using Radio Frequency and Amplitude Modulation
Mr. Khristopherson C. Cajucom, Analog Devices Inc San Jose, California; Mr. Win T. Tun, Analog Devices Inc San Jose, California
Emerging FA Techniques and Concepts - High-spatial-resolution Thermoreflectance Microscope using Shear Force Microscopy
Dr. Mun Goung Jeong, Korea Basic Science Institute; Dr. Ilkyu Han, Korea Basic Science Institute; Dr. Dong Uk Kim, Korea Basic Science Institute; Mr. Chan Bae Jeong, Korea Basic Science Institute; Dr. Dongmok Kim, Korea Basic Science Institute; Dr. Ki Soo Chang, Korea Basic Science Institute
Emerging FA Techniques and Concepts - Hyperspectral Thermal Radiation Microscopy for Quantitative High-Temperature measurement of Microscale Devices
Dr. Dongmok Kim, Korea Basic Science Institute; Dr. Dong Uk Kim, Korea Basic Science Institute; Mr. Chan Bae Jeong, Korea Basic Science Institute; Dr. Mun Goung Jeong, Korea Basic Science Institute; Dr. Ki Soo Chang, Korea Basic Science Institute
Emerging FA Techniques and Concepts - A Pathway for Electron Beam Assisted Back-Contact Free Electrical Atomic Force Microscopy
Mr. Md Ashiqur Rahman Laskar, Arizona State University; Dr. Sanchari Sen, Arizona State University; Sakib Ahmed, Arizona State University; Mr. Srijan Chakrabarti, Arizona State University; Md Jayed Hossain, Arizona State University; Filippo Ozino Caligaris, Arizona State University; Anacleto Proietti, Arizona State University; Prof. Umberto Celano, Arizona State University
Sample Preparation and Device De-processing - Efficient Preparation of GaAs Devices utilizing Microwave Induced Plasma Decapsulation
Mr. Brandon Sunthorn Capellini, Analog Devices, Inc.
FA Process: Fault Isolation, Mechanisms, & Solutions - Stress-Optimized Screening for Reliability-Critical BCAT Disconnections in Advanced DRAM
Ms. SEAEUN PARK, Samsung Electronics; Mr. Jongwon Nam, Samsung Electronics; Mr. Yumin Kim, Samsung Electronics; Mr. Ilwoo Jung, Samsung Electronics; Mr. Dongin Lee, Samsung Electronics
Die Level Fault Isolation - High Resolution Thermal Imaging of Si Device by Near-Infrared Thermo-Reflectance and Separation of Thermal/Electro-optical Mixed Signals by Means of Bias Dependency
Dr. Norimichi Chinone, Hamamatsu Corporation; Mr. Shota Nozue, Hamamatsu Photonics K.K.; Mr. Shimpei Tominaga, Hamamatsu Photonics K.K.; Mr. Yuhei Aoshima, Hamamatsu Photonics K.K.
Die Level Fault Isolation - Successful E-Beam Probing on Drift Inducing Samples Using Software Correction
Dr. Zahra Ahmadi, Thermo Fisher Scientific; Ms. Viviane Zurdo Costa, Thermo Fisher Scientific; Mr. Michael Morag, Thermo Fisher Scientific; Mr. Neel Leslie, Thermo Fisher Scientific
Investigating Subsurface Defects: 3D EBAC Mapping with Varying Beam Energies
Mr. Shih-Lin Scott Lee, Eurofins EAG Laboratory; Dr. Lorenz Lechner, Kleindiek Inc.
Accelerated Prediction and Spatial Profiling of HEIP Degradation for Layout-Driven Reliability Analysis
Ms. Gyulyeong Nor, Samsung Electronics; Mr. Jongwon Nam, Samsung Electronics; Mr. Yumin Kim, Samsung Electronics; Mr. Ilwoo Jung, Samsung Electronics; Mr. Dongin Lee, Samsung Electronics
AI Applications for Failure Analysis - Advanced Data Imputation Methodology for Handling Missing Values in the Semiconductor Manufacturing Process
Ms. Julee Kim, Samsung Electronics; Mr. Seokyeong Kim, Samsung Electronics; Mr. Soojae Heo, Samsung Electronics; Mr. Hyoungjun Kim, Samsung Electronics; Mr. Junghwan Lee, Samsung Electronics
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