Poster Session

Product Yield, Test and Diagnostics - Debug Methodology for Resolving Reset Failures in Chipset Using Optical and Physical Probing Techniques
Ms. Loh Lay Hoon, Intel Technology Sdn Bhd

Product Yield, Test and Diagnostics - Optimizing Diagnosis Workload with Dynamic Partitioning-Based Scan Diagnosis
Mr. Preston McWithey, Siemens; Ms. Shaleen Acharya, Siemens; Jayant D'Souza, Siemens

Die Level Fault Isolation - Failure Defect Modeling and Offset Voltage Calculator to determine the Effect of PMOS Threshold Voltage Shift and Resistance Mismatch of Segmented Digital-to-Analog Converter
Mr. Arnulfo Evangelista, Analog Devices Inc; Mrs. Janella Igtiben, Analog Devices Inc; Mr. Ryan Ordiales, Analog Devices Inc

Die Level Fault Isolation - Thermo-reflectance monitoring in cases of bridge defect
Mr. Angelo Antonio Merassi, STMicroelectronics

Die Level Fault Isolation - Lateral Resolution Improvement of Lock-in OBIRCH by Deconvoluting Heat Diffusion
Dr. Norimichi Chinone, Hamamatsu Corporation

Die Level Fault Isolation - Assessing The 1154nm Laser Fault-isolation Dual-mechanism For Identifying Extremely Soft Metallic Voids
Dr. Tzach Jaffe, Annapurna Labs Ltd, Amazon; Mr. Or haimson, Annapurna Labs Ltd, Amazon

Microscopy Analysis and Material Characterization - High-Resolution Ion Microscopy and SIMS Nanoanalytics for Microelectronics Applications
Dr. Peter Gnauck, Raith GmbH; Mr. Torsten Richter, Raith GmbH; Dr. Alexander Ost, Raith GmbH

Microscopy Analysis and Material Characterization - Multimodal In Situ Electron Microscopy Platform for Correlative Electro-Thermal Characterization and Failure Analysis
Dr. Hongkui Zheng, DENSsolutions; Dr. Yevheniy Pivak, DENSsolutions; Mr. Christian Deen-van Rossum, DENSsolutions; Dr. Mia Andersen, DENSsolutions; Merijn Pen, DENSsolutions; Shibabrata Basak, Institute of Energy Technologies - Fundamental Electrochemistry (IET-1), Forschungszentrum Jülich GmbH; Rüdiger-A Eichel, Institute of Energy Technologies - Fundamental Electrochemistry (IET-1), Forschungszentrum Jülich GmbH; Hugo Pérez Garza, DENSsolutions

Microscopy Analysis and Material Characterization - Streamlining Accurate 4D-STEM Phase-Orientation Analysis of Polymorphic Polycrystalline Thin Films in Semiconductor TEM Labs for Routine Application
Dr. Daniel Nemecek, TESCAN Group

Microscopy Analysis and Material Characterization - Wavelet-Augmented Vision Transformers for High-Resolution, Low-Data-Regime Segmentation of Semiconductor Structures
Dr. Chaitanya Gadre, PhD, Intel; Dr. Suk Chung, PhD, Intel; Dr. Sung Lim, PhD, Intel

FA Process: Fault Isolation, Mechanisms, & Solutions - Analysis of joint misalignment defects on multi-tier 3D NAND
Anita Poudel, Sandisk Corporation

FA Process: Fault Isolation, Mechanisms, & Solutions - Root cause analysis of Rapid Thermal Process contamination using FIB-SEM nanoprobe characterization
Mr. David Macmahon, Micron Technology; Mrs. Samantha Spangler, Micron Technology; Riley Christopher, Micron Technology; Dave Moore, Micron Technology; Joe Gilyard, Micron Technology; Kee Hui Foo, Micron Technology; Bhavani Maddipoti, Micron Technology

Microscopy Analysis and Material Characterization - Elemental Nano-Volume Characterization of ALD Defect Particles by Auger Electron Spectroscopy
Jennifer Mann, Physical Electronics; Evaristo Contestabile, Physical Electronics

Microscopy Analysis and Material Characterization - Thermoreflectance microscopy for the steady-state and transient thermal analysis of semiconductor devices
Dr. Ki Soo Chang, Korea Basic Science Institute

Microscopy Analysis and Material Characterization - Unraveling the Ni Multi-Moon Issue: A Cross-Functional Approach to Expose and Analyze Subsurface Defects
Dr. Yu Zhang, Global Foundries; Gregory Marks, Global Foundries; Esther Chen, GlobalFoundries; Daewon Yang, GlobalFoundries; Jongsuk Park, GlobalFoundries; Kyle Cogswell, GlobalFoundries; Nick Sobolew, GlobalFoundries

Die Level Fault Isolation - Failure Analysis of a 2nm device with BSPDN Architecture Using an Electron Beam Probing
Mr. Yin Lung Ke, TSMC

Die Level Fault Isolation - Die-Level Defect Localization of Super Power Rail Using Dynamic Lock-In Thermography
Mrs. Yi-Hua Huang, Taiwan Semiconductor Manufacturing Company Limited; Mr. Samson Tsai, Thermofisher Sicentific

Die Level Fault Isolation - 3D VNAND Fault Isolation Method using Lock-In OBIRCH
Ms. Hyeongki Kim, Samsung Electronics; Mr. Akihito Uchikado, Hamamatsu Photonics K.K.; Dr. Norimichi Norimichi, Hamamatsu Photonics K.K.

More Than Moore - High-Bandwidth 1135 nm Sb-Doped VCSEL for Silicon Photonics: Performance, TEM, and EDX Analyses
Dr. Yu-Heng Hong, Hon Hai Precision Industry Co., Ltd.

More Than Moore - Reliability Testing and Failure Analysis of Silicon Photonics with 60GHz for 200G/lane under Thermal and Humidity Stress
Dr. Huang-Yu Lin, Hon Hai Research Institute, Foxconn; Dr. Chin Wei Sher, Hon Hai Research Institute, Foxconn; Dr. Wen-Cheng Hsu, Hon Hai Research Institute, Foxconn; Prof. Hao Chung Kuo, Hon Hai Research Institute, Foxconn; Dr. Yong-Fen Hsieh, Materials Analysis Technology Inc.; Ms. Pei-Ju Chiu, Materials Analysis Technology Inc.; Yu Feng Ko, Materials Analysis Technology Inc.

AI Applications for Failure Analysis - Adaptive Offset Cancellation in Bit-Line Sense Amplifiers: A Machine Learning Approach
Mr. Tak Jinhyung, Samsung Electronics

Device Analysis: Case Studies - A study for a Novel Al Pad structure and corresponding discoloration
Mr. Ching Wen Su, Ardentec Corporation; Dr. Wen-Fei Hsieh, Ardentec Corporation; Mr. Vincent Chen, Ardentec Corporation; Mrs. Irene Ou, Ardentec Corporation; Mr. Fu-Wang Hsu, Ardentec Corporation; Dr. Yung Song Lou, Ardentec Corporation

AI Applications for Failure Analysis - A Novel Approach to Multivariate Time-series Anomaly Detection and Correlation analysis for In-fab Metrology Data
Ms. Youngeun Kim, Samsung Electronics; Mr. Hyunmin Kim, Samsung Electronics

AI Applications for Failure Analysis - Grain size analysis by differential phase contrast (DPC)- scanning transmission electron microscopy (STEM) and artificial intelligence (AI) segmentation
Dr. Chen Li, Thermo Fisher Scientific; Dr. Chu-Ping Yu, Thermo Fisher Scientific; Dr. Chunhua Tang, Thermo Fisher Scientific; Dr. Dominique Delille, Thermo Fisher Scientific; Mr. Michael Strauss, ThermoFisher Scientific; Dr. Xiangyu Zhu, University of Texas

AI Applications for Failure Analysis - A Novel Approach to Multivariate Time-series Anomaly Detection and Correlation analysis for In-fab Metrology Data
Ms. Youngeun Kim, Samsung Electronics; Mr. Hyunmin Kim, Samsung Electronics; Mr. Hyoungjun Kim, Samsung Electronics

AI Applications for Failure Analysis - AI-Driven Anomaly Detection in Electron Microscopy Images of Periodic Circuit Structures
Dr. Alexey Solovey, NVIDIA Corporation; Dr. Chuan Zhang, NVIDIA Corporation; Mr. Jonathon Elliott, NVIDIA Corporation; Mr. Mikhail Filimonov, NVIDIA Corporation; Dr. Jane Y. Li, NVIDIA Corporation

Microscopy Analysis and Material Characterization - Live Imaging of Radiation-Induced Electronic Damage with STEM EBIC
Dr. William Hubbard, PhD, NanoElectronic Imaging, Inc.; Prof. B.C. Regan, University of California, Los Angeles

Microscopy Analysis and Material Characterization - ECCI imaging of epitaxial GaN with conventional FE-SEM
Ms. Hyun Hwa Kim, Carl Zeiss Microscopy; Mr. Greg Johnson, Carl Zeiss Microscopy; Dr. Thomas Rodgers, Carl Zeiss Microscopy

Package Level Fault Isolation - Embedded Deep Trench Capacitor (DTC) Failure Analysis Methodolgy
Mr. Hu hao, Qualcomm; Mr. kan sun, Qualcomm; Mr. Cheng Hoe lee, Qualcomm; Mr. Chua Tze ping, Qualcomm; Mrs. Lim Jye Pine, Qualcomm

Emerging FA Techniques and Concepts - Open Failure LiT Localization Using Radio Frequency and Amplitude Modulation
Mr. Khristopherson C. Cajucom, Analog Devices Inc San Jose, California; Mr. Win T. Tun, Analog Devices Inc San Jose, California

Emerging FA Techniques and Concepts - High-spatial-resolution Thermoreflectance Microscope using Shear Force Microscopy
Dr. Mun Goung Jeong, Korea Basic Science Institute; Dr. Ilkyu Han, Korea Basic Science Institute; Dr. Dong Uk Kim, Korea Basic Science Institute; Mr. Chan Bae Jeong, Korea Basic Science Institute; Dr. Dongmok Kim, Korea Basic Science Institute; Dr. Ki Soo Chang, Korea Basic Science Institute

Emerging FA Techniques and Concepts - Hyperspectral Thermal Radiation Microscopy for Quantitative High-Temperature measurement of Microscale Devices
Dr. Dongmok Kim, Korea Basic Science Institute; Dr. Dong Uk Kim, Korea Basic Science Institute; Mr. Chan Bae Jeong, Korea Basic Science Institute; Dr. Mun Goung Jeong, Korea Basic Science Institute; Dr. Ki Soo Chang, Korea Basic Science Institute

Emerging FA Techniques and Concepts - A Pathway for Electron Beam Assisted Back-Contact Free Electrical Atomic Force Microscopy
Mr. Md Ashiqur Rahman Laskar, Arizona State University; Dr. Sanchari Sen, Arizona State University; Sakib Ahmed, Arizona State University; Mr. Srijan Chakrabarti, Arizona State University; Md Jayed Hossain, Arizona State University; Filippo Ozino Caligaris, Arizona State University; Anacleto Proietti, Arizona State University; Prof. Umberto Celano, Arizona State University

Sample Preparation and Device De-processing - Detection of buried defects at gate level in silicon-based semiconductor components: An cost-effective Approach
Dr. Sarat Kumar Dash, U R RAO Satellite Center (ISRO)

Sample Preparation and Device De-processing - Efficient Preparation of GaAs Devices utilizing Microwave Induced Plasma Decapsulation
Mr. Brandon Sunthorn Capellini, Analog Devices, Inc.

Product Yield, Test and Diagnostics - Failure Analysis for Yield Improvement Based on Cell-aware Diagnosis
Muyun Cho, Samsung; Youngseok Son, Samsung; Hyunyul Lim, Samsung; Jaeseok Park, Samsung; Eunkyung Kang, Synopsys Inc; Changseon Chae, Synopsys Inc; Dr. Ruifeng Guo, Synopsys

Product Yield, Test and Diagnostics - Iterative approach LVI-based for devices with single scan chain architecture
Mr. Paolo Gabriele Orlando, STMicroelectronics; Mr. Angelo Antonio Merassi, STMicroelectronics; Mrs. Patrizia Casella, STMicroelectronics

Sample Preparation and Device De-processing - Mechanical Sample Preparation of Heterogenous Devices - Understanding the Impact of Chiplet Stresses Through a Process of Elimination
Mr. Chris Richardson, Allied High Tech Products, Inc.; Mr. Skylar Fox, Allied High Tech Products, Inc.

FA Process: Fault Isolation, Mechanisms, & Solutions - Stress-Optimized Screening for Reliability-Critical BCAT Disconnections in Advanced DRAM
Ms. SEAEUN PARK, Samsung Electronics; Mr. Jongwon Nam, Samsung Electronics; Mr. Yumin Kim, Samsung Electronics; Mr. Ilwoo Jung, Samsung Electronics; Mr. Dongin Lee, Samsung Electronics

Die Level Fault Isolation - High Resolution Thermal Imaging of Si Device by Near-Infrared Thermo-Reflectance and Separation of Thermal/Electro-optical Mixed Signals by Means of Bias Dependency
Dr. Norimichi Chinone, Hamamatsu Corporation; Mr. Shota Nozue, Hamamatsu Photonics K.K.; Mr. Shimpei Tominaga, Hamamatsu Photonics K.K.; Mr. Yuhei Aoshima, Hamamatsu Photonics K.K.

Die Level Fault Isolation - Successful E-Beam Probing on Drift Inducing Samples Using Software Correction
Dr. Zahra Ahmadi, Thermo Fisher Scientific; Ms. Viviane Zurdo Costa, Thermo Fisher Scientific; Mr. Michael Morag, Thermo Fisher Scientific

Power Devices (Si, SiC, GaN) - Investigation of early photon emission (PEM) in GaN-on-Si HEMTs, part I
Mr. Greg Johnson, Carl Zeiss Microscopy; Mr. Andreas Rummel, Kleindiek Nanotechnik GmbH; Dr. Heiko Stegmann, Carl Zeiss Microscopy GmbH; Ms. Hyun Hwa Kim, Carl Zeiss Microscopy; Mr. Kevin A. Distelhurst, BS/MS EE, GLOBALFOUNDRIES; N/A Josh Joy, GlobalFoundries