FA Process: Fault Isolation, Mechanisms, & Solutions - Stress-Optimized Screening for Reliability-Critical BCAT Disconnections in Advanced DRAM

Wednesday, November 19, 2025
Ms. SEAEUN PARK , Samsung Electronics, Hwaseong, Gyeonggi-do, Korea, Republic of (South)
Mr. Jongwon Nam , Samsung Electronics, Hwaseong, Gyeonggi-do, Korea, Republic of (South)
Mr. Yumin Kim , Samsung Electronics, Hwaseong, Gyeonggi-do, Korea, Republic of (South)
Mr. Ilwoo Jung , Samsung Electronics, Hwaseong, Gyeonggi-do, Korea, Republic of (South)
Mr. Dongin Lee , Samsung Electronics, Hwaseong, Gyeonggi-do, Korea, Republic of (South)

Summary:

With continued DRAM scaling, BCAT disconnections have emerged as critical reliability risks. Conventional stress tests using long WL activation are time-consuming and degrade samples. This work proposes a faster, voltage- and timing-optimized screening method that enhances defect detection without sacrificing accuracy.
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See more of: Poster Session