Die Level Fault Isolation - High Resolution Thermal Imaging of Si Device by Near-Infrared Thermo-Reflectance and Separation of Thermal/Electro-optical Mixed Signals by Means of Bias Dependency
Die Level Fault Isolation - High Resolution Thermal Imaging of Si Device by Near-Infrared Thermo-Reflectance and Separation of Thermal/Electro-optical Mixed Signals by Means of Bias Dependency
Wednesday, November 19, 2025
Summary:
Laser-scanning-based thermo-reflectance (TR) was applied to Si device to perform high spatial resolution thermal imaging. The resulting images were mixture of electro-optical and thermal signals, which were separated by means of investigating bias voltage dependency. TR was confirmed to be promising for high spatial resolution thermal imaging on Si devices.
Laser-scanning-based thermo-reflectance (TR) was applied to Si device to perform high spatial resolution thermal imaging. The resulting images were mixture of electro-optical and thermal signals, which were separated by means of investigating bias voltage dependency. TR was confirmed to be promising for high spatial resolution thermal imaging on Si devices.