Die-Edge Leakage Current for Stacked Silicon Photo Multiplier Device
Die-Edge Leakage Current for Stacked Silicon Photo Multiplier Device
Thursday, November 20, 2025: 8:00 AM
1 (Pasadena Convention Center)
Summary:
A new leakage mechanism is observed related to laser grooving of bonded wafers. The recast debris from laser grooving can cause a leakage path between the upper substrate and the lower substrate. A simple method to reduce the leakage is to provide a mesa trench around the perimeter of the upper substrate
A new leakage mechanism is observed related to laser grooving of bonded wafers. The recast debris from laser grooving can cause a leakage path between the upper substrate and the lower substrate. A simple method to reduce the leakage is to provide a mesa trench around the perimeter of the upper substrate