Sample Preparation and Device De-processing - Efficient Preparation of GaAs Devices utilizing Microwave Induced Plasma Decapsulation
Sample Preparation and Device De-processing - Efficient Preparation of GaAs Devices utilizing Microwave Induced Plasma Decapsulation
Wednesday, November 19, 2025
Summary:
For several decades, many devices have made use of the specialized properties of Gallium Arsenide (GaAs), such as the ability to directly emit light (unlike silicon). Unfortunately, this material presents a host of problems in the Failure Analysis field. IC package decapsulation, challenging as it is, can be further complicated by the die’s sensitivity to acid. Stressed parts are liable to cracking in passivation, which would normally not present a problem in decapsulating silicon-based devices. For GaAs parts, this can lead to acid entering the die and destroying the vital components needed to diagnose the problem. This paper instead looks to microwave-Induced Plasma, a new and rapidly developing tool that has provided solutions to many of the industry’s widespread problems. MIP is a highly selective technology, allowing for decapsulation without the corrosion problems typically observed in acid decapsulation. With GaAs as a baseline being so expensive, it is vital that the failure analysis process ensures a high rate of success from the start. Microwave Induced Plasma systems have proven to not affect the electrical performance of the part, making it an ideal and novel approach for these vital devices.
For several decades, many devices have made use of the specialized properties of Gallium Arsenide (GaAs), such as the ability to directly emit light (unlike silicon). Unfortunately, this material presents a host of problems in the Failure Analysis field. IC package decapsulation, challenging as it is, can be further complicated by the die’s sensitivity to acid. Stressed parts are liable to cracking in passivation, which would normally not present a problem in decapsulating silicon-based devices. For GaAs parts, this can lead to acid entering the die and destroying the vital components needed to diagnose the problem. This paper instead looks to microwave-Induced Plasma, a new and rapidly developing tool that has provided solutions to many of the industry’s widespread problems. MIP is a highly selective technology, allowing for decapsulation without the corrosion problems typically observed in acid decapsulation. With GaAs as a baseline being so expensive, it is vital that the failure analysis process ensures a high rate of success from the start. Microwave Induced Plasma systems have proven to not affect the electrical performance of the part, making it an ideal and novel approach for these vital devices.