Microscopy Analysis and Material Characterization - Streamlining Accurate 4D-STEM Phase-Orientation Analysis of Polymorphic Polycrystalline Thin Films in Semiconductor TEM Labs for Routine Application
Microscopy Analysis and Material Characterization - Streamlining Accurate 4D-STEM Phase-Orientation Analysis of Polymorphic Polycrystalline Thin Films in Semiconductor TEM Labs for Routine Application
Wednesday, November 19, 2025
Summary:
Ferroelectric polycrystalline thin films play an important role in many semiconductor devices and applications. Their unique properties originate from their polymorphic, multiphase nature, which however represents a challenge for their production and process development. Scanning transmission electron microscopy combined with electron diffraction (4D-STEM) are the optimal techniques for identifying and assessing the relative ratio of different phases in these materials at the nanoscale. The quality of data and the accuracy of results are substantially improved by using electron beam precession. However, the traditional approaches using 3rd party modules require high levels of TEM expertise and strongly depend on the skills of the TEM operator. Here, a new approach to precession-assisted 4D-STEM characterization of polymorphic thin films that is suitable for routine applications in semiconductor industry TEM labs independently of the operator skill and expertise will be shown and demonstrated on the specific example of aluminum-doped zinc oxide thin films.
Ferroelectric polycrystalline thin films play an important role in many semiconductor devices and applications. Their unique properties originate from their polymorphic, multiphase nature, which however represents a challenge for their production and process development. Scanning transmission electron microscopy combined with electron diffraction (4D-STEM) are the optimal techniques for identifying and assessing the relative ratio of different phases in these materials at the nanoscale. The quality of data and the accuracy of results are substantially improved by using electron beam precession. However, the traditional approaches using 3rd party modules require high levels of TEM expertise and strongly depend on the skills of the TEM operator. Here, a new approach to precession-assisted 4D-STEM characterization of polymorphic thin films that is suitable for routine applications in semiconductor industry TEM labs independently of the operator skill and expertise will be shown and demonstrated on the specific example of aluminum-doped zinc oxide thin films.