Microscopy Analysis and Material Characterization - Live Imaging of Radiation-Induced Electronic Damage with STEM EBIC
Microscopy Analysis and Material Characterization - Live Imaging of Radiation-Induced Electronic Damage with STEM EBIC
Wednesday, November 19, 2025
Summary:
We present a transmission electron microscope (TEM)-based method for live observation of radiation-induced degradation in electronic devices. We use the scanning TEM (STEM) beam both as an extremely high-fluence beam of beta particles (≤0.3 MeV) and as a probe, at each pixel, of the resulting impact on the device’s electronic performance using STEM electron beam-induced current (STEM EBIC) imaging. We compare STEM EBIC radiation testing with standard beamline testing procedures and discuss its advantages and limitations. We also demonstrate its implementation on samples extracted from commercial components.
We present a transmission electron microscope (TEM)-based method for live observation of radiation-induced degradation in electronic devices. We use the scanning TEM (STEM) beam both as an extremely high-fluence beam of beta particles (≤0.3 MeV) and as a probe, at each pixel, of the resulting impact on the device’s electronic performance using STEM electron beam-induced current (STEM EBIC) imaging. We compare STEM EBIC radiation testing with standard beamline testing procedures and discuss its advantages and limitations. We also demonstrate its implementation on samples extracted from commercial components.