Microscopy Analysis and Material Characterization - ECCI imaging of epitaxial GaN with conventional FE-SEM
Microscopy Analysis and Material Characterization - ECCI imaging of epitaxial GaN with conventional FE-SEM
Wednesday, November 19, 2025
Summary:
Electron Channeling Contrast Imaging (ECCI) was examined on a commercially available, 200 mm, GaN-on-Si substrate. In order to explore the effect of field of view of the SEM model, SEMs with and without a double-deflector system were used. The results show that as long as a SEM has a retractable BSD detector, excellent data could be obtained, even without the benefit of a larger field of view.
Electron Channeling Contrast Imaging (ECCI) was examined on a commercially available, 200 mm, GaN-on-Si substrate. In order to explore the effect of field of view of the SEM model, SEMs with and without a double-deflector system were used. The results show that as long as a SEM has a retractable BSD detector, excellent data could be obtained, even without the benefit of a larger field of view.