Power Devices (Si, SiC, GaN) - Investigation of early photon emission (PEM) in GaN-on-Si HEMTs, part I
Power Devices (Si, SiC, GaN) - Investigation of early photon emission (PEM) in GaN-on-Si HEMTs, part I
Wednesday, November 19, 2025
Summary:
A study is undertaken to examine the possibility of further improving the reliability of GaN-on-Si HEMTs by means of defect localization and physical characterization. A phenomenon of early photon emission (PEM) spots was observed on a (good) commercially available, GaN device. STEM lamellae were collected of areas on and off a PEM spot show no difference in dislocation count. This paper represents the first part of this study, examination in STEM cross sections.
A study is undertaken to examine the possibility of further improving the reliability of GaN-on-Si HEMTs by means of defect localization and physical characterization. A phenomenon of early photon emission (PEM) spots was observed on a (good) commercially available, GaN device. STEM lamellae were collected of areas on and off a PEM spot show no difference in dislocation count. This paper represents the first part of this study, examination in STEM cross sections.