CAD Alignment Methodologies for Accurate and Reliable Optical Fault Isolation at Sub-5nm Process Technologies
CAD Alignment Methodologies for Accurate and Reliable Optical Fault Isolation at Sub-5nm Process Technologies
Thursday, November 20, 2025: 8:40 AM
1 (Pasadena Convention Center)
Summary:
The continued scaling of semiconductor technologies below 5 nm has created significant challenges for CAD (computer-aided design) alignment for optical and LSM (laser scanning microscope) images. Besides increasing the gap between optical resolution and feature size, shrinking geometries drive the need for ever greater alignment accuracy. All optical fault isolation (OFI) techniques are affected, but laser voltage probing (LVP) is disproportionately impacted due to its unique workflow. The resulting productivity hit has already been felt for 5nm and is significantly worse for 3nm. In this paper, we will present CAD alignment methodologies for 3nm, provide examples, and discuss prospects for future nodes.
The continued scaling of semiconductor technologies below 5 nm has created significant challenges for CAD (computer-aided design) alignment for optical and LSM (laser scanning microscope) images. Besides increasing the gap between optical resolution and feature size, shrinking geometries drive the need for ever greater alignment accuracy. All optical fault isolation (OFI) techniques are affected, but laser voltage probing (LVP) is disproportionately impacted due to its unique workflow. The resulting productivity hit has already been felt for 5nm and is significantly worse for 3nm. In this paper, we will present CAD alignment methodologies for 3nm, provide examples, and discuss prospects for future nodes.