A Reliable Workflow to Localize Silicon Pipeline Defect in MOSFET by Nanoprobe Analysis and Wright Etch Method
A Reliable Workflow to Localize Silicon Pipeline Defect in MOSFET by Nanoprobe Analysis and Wright Etch Method
Wednesday, October 7, 2026: 1:40 AM
Exhibit Hall (Henry B. González Convention Center)
Summary:
The paper presents a reliable workflow to localize Si pipeline defect hidden in failed metal-oxide-semiconductor field-effect transistor (MOSFET) by nanoprobe analysis and Wright etch method. For that specific crystal defect, the workflow achieves excellent physical failure analysis (PFA) success rate instead of dependance on high-cost transmission electron microscope (TEM) survey.
The paper presents a reliable workflow to localize Si pipeline defect hidden in failed metal-oxide-semiconductor field-effect transistor (MOSFET) by nanoprobe analysis and Wright etch method. For that specific crystal defect, the workflow achieves excellent physical failure analysis (PFA) success rate instead of dependance on high-cost transmission electron microscope (TEM) survey.