EBAC signal enhancement with the studies on the phenomenon of ‘overloading’
EBAC signal enhancement with the studies on the phenomenon of ‘overloading’
Wednesday, October 7, 2026: 4:00 PM
Summary:
With development of semiconductor progresses, more specific defect localization was required at failure analysis field. As we all known, EBAC (E-beam absorbed current) is an important method for identify failures such as open, high resistance or short at BEOL (Back-end-of-line) and gate oxide damage at FEOL (Front-end-of-line). However, sometimes in the actual application to reveal the whole net with EBAC signal won’t be successful as expected instead of that all the metals irradiated by E-beam at the same time, so-called ‘overloading’. As a result, it’ll be failed to perform defect isolation by EBAC as well. To resolve this problem, there’re two approaches to be adapted to prevent ‘overloading’ and the possible mechanism of ‘overloading’ was studied through exponential searching.
With development of semiconductor progresses, more specific defect localization was required at failure analysis field. As we all known, EBAC (E-beam absorbed current) is an important method for identify failures such as open, high resistance or short at BEOL (Back-end-of-line) and gate oxide damage at FEOL (Front-end-of-line). However, sometimes in the actual application to reveal the whole net with EBAC signal won’t be successful as expected instead of that all the metals irradiated by E-beam at the same time, so-called ‘overloading’. As a result, it’ll be failed to perform defect isolation by EBAC as well. To resolve this problem, there’re two approaches to be adapted to prevent ‘overloading’ and the possible mechanism of ‘overloading’ was studied through exponential searching.