Low-Temperature CVD Oxide Deposition for Photoresist Protection
Low-Temperature CVD Oxide Deposition for Photoresist Protection
Wednesday, October 7, 2026: 7:20 PM
Summary:
This work establishes an artifact‑free TEM methodology for photoresist (PR) characterization using an ultrathin low‑temperature CVD oxide layer. Unlike conventional Pt/Ir protection that induces beam-driven damage, the approach preserves native PR morphology during FIB and TEM processes. It achieves ~7% improvement in profile accuracy and ~99% imaging success rate. More importantly, artifact-free characterization enables unambiguous root-cause identification, demonstrated by yield recovery from 12.5% to 0.3% in a real manufacturing case. This work transforms PR analysis from artifact-limited observation into a decision-enabling diagnostic capability for advanced semiconductor failure analysis and yield optimization.
This work establishes an artifact‑free TEM methodology for photoresist (PR) characterization using an ultrathin low‑temperature CVD oxide layer. Unlike conventional Pt/Ir protection that induces beam-driven damage, the approach preserves native PR morphology during FIB and TEM processes. It achieves ~7% improvement in profile accuracy and ~99% imaging success rate. More importantly, artifact-free characterization enables unambiguous root-cause identification, demonstrated by yield recovery from 12.5% to 0.3% in a real manufacturing case. This work transforms PR analysis from artifact-limited observation into a decision-enabling diagnostic capability for advanced semiconductor failure analysis and yield optimization.