Failure Model Identification of GOI Failure in Wafer Fabrication

Summary:

In the front-end processes of wafer fabrication (Fab), failure analysis of GOI failure is crucial. It is essential for failure analysis engineers to quickly and accurately determine the failure model to ascertain whether a failure is caused by contamination or by Plasma Induced Damage (PID). This determination guides the selection of appropriate subsequent analysis methods to identify the root cause. This study presents a rapid identification method for GOI failure in wafer fab. By correlating the shape and crystallinity of etched silicon defects observed via Wright Etch/SEM with the underlying failure cause (amorphous for PID, crystalline "flower-shaped" for contamination), this method establishes a critical diagnostic step. It enhances the accuracy, efficiency, and success rate of failure analysis while reducing costs in the semiconductor technology and wafer fabrication fields. In this paper, we will demonstrate some case-studies.