Influence of Implantation Energy on the Microstructure and Resistivity of Phosphorus-Implanted Silicon Carbide during 355 nm Laser Annealing
Influence of Implantation Energy on the Microstructure and Resistivity of Phosphorus-Implanted Silicon Carbide during 355 nm Laser Annealing
Wednesday, October 7, 2026: 4:40 PM
206 A-B (Henry B. González Convention Center)
Summary:
Silicon carbide (SiC) is a key material for next-generation high-power and high-temperature electronic devices. This study investigates how phosphorus implantation energy influences the microstructural evolution and electrical properties of 4H-SiC subjected to 355 nm nanosecond laser annealing. Phosphorus ions were implanted at energies ranging from 30 to 150 keV with a fixed dose of 5 × 10¹⁵ cm⁻², followed by multi-cycle laser annealing. Secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM), and four-point probe measurements were employed to evaluate dopant redistribution, recrystallization behavior, and electrical performance. Results show that increasing implantation energy produces thicker implantation-damaged layers, which enhance thermal confinement during laser irradiation and promote recrystallization. TEM observations revealed the formation of progressively thicker polycrystalline SiC layers with increasing implantation energy, while a highly crystalline SiC layer was observed in the 150 keV sample. Electrical measurements demonstrated a substantial reduction in resistivity after laser annealing, with the lowest value (~0.2 Ω·cm) achieved at 70 keV. These findings highlight implantation energy as a critical parameter governing defect recovery, dopant activation, and electrical conductivity in laser-annealed phosphorus-implanted 4H-SiC.
Silicon carbide (SiC) is a key material for next-generation high-power and high-temperature electronic devices. This study investigates how phosphorus implantation energy influences the microstructural evolution and electrical properties of 4H-SiC subjected to 355 nm nanosecond laser annealing. Phosphorus ions were implanted at energies ranging from 30 to 150 keV with a fixed dose of 5 × 10¹⁵ cm⁻², followed by multi-cycle laser annealing. Secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM), and four-point probe measurements were employed to evaluate dopant redistribution, recrystallization behavior, and electrical performance. Results show that increasing implantation energy produces thicker implantation-damaged layers, which enhance thermal confinement during laser irradiation and promote recrystallization. TEM observations revealed the formation of progressively thicker polycrystalline SiC layers with increasing implantation energy, while a highly crystalline SiC layer was observed in the 150 keV sample. Electrical measurements demonstrated a substantial reduction in resistivity after laser annealing, with the lowest value (~0.2 Ω·cm) achieved at 70 keV. These findings highlight implantation energy as a critical parameter governing defect recovery, dopant activation, and electrical conductivity in laser-annealed phosphorus-implanted 4H-SiC.