Influence of Implantation Energy on the Microstructure and Resistivity of Phosphorus-Implanted Silicon Carbide during 355 nm Laser Annealing
Influence of Implantation Energy on the Microstructure and Resistivity of Phosphorus-Implanted Silicon Carbide during 355 nm Laser Annealing
Wednesday, October 7, 2026: 4:40 PM
Summary:
The influence of implantation energy on the microstructure and resistivity of phosphorus-implanted 4H-SiC during 355 nm laser annealing is investigated. Phosphorus ions were implanted into semi-insulating 4H-SiC at a fixed dose of 5 × 10¹⁵ cm⁻² with energies ranging from 30 to 150 keV, followed by multi-cycle laser annealing at 355 nm (3.5 W). Microstructural and electrical properties were characterized using TEM, SIMS, and four-point probe measurements. Results show that increasing implantation energy leads to thicker damaged layers and significantly affects recrystallization behavior. After annealing, a polycrystalline SiC layer forms near the surface, with grain size decreasing with depth due to non-uniform heat distribution in the amorphous layer. Despite minimal dopant redistribution, higher implantation energies result in lower resistivity, indicating enhanced dopant activation. These results demonstrate that implantation energy is a key factor governing microstructure evolution and electrical performance, providing guidance for optimizing laser annealing in SiC device fabrication.
The influence of implantation energy on the microstructure and resistivity of phosphorus-implanted 4H-SiC during 355 nm laser annealing is investigated. Phosphorus ions were implanted into semi-insulating 4H-SiC at a fixed dose of 5 × 10¹⁵ cm⁻² with energies ranging from 30 to 150 keV, followed by multi-cycle laser annealing at 355 nm (3.5 W). Microstructural and electrical properties were characterized using TEM, SIMS, and four-point probe measurements. Results show that increasing implantation energy leads to thicker damaged layers and significantly affects recrystallization behavior. After annealing, a polycrystalline SiC layer forms near the surface, with grain size decreasing with depth due to non-uniform heat distribution in the amorphous layer. Despite minimal dopant redistribution, higher implantation energies result in lower resistivity, indicating enhanced dopant activation. These results demonstrate that implantation energy is a key factor governing microstructure evolution and electrical performance, providing guidance for optimizing laser annealing in SiC device fabrication.