Power Devices (Si, SiC, GaN)
Wednesday, October 7, 2026: 4:20 PM-5:00 PM
206 A-B (Henry B. González Convention Center)
Dr. Christopher H. Kang, Thermo Fisher Scientific and Prof. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508
4:20 PM
On the Impact of Proton Irradiation on TDDB Reliability of SiC MOSFETs
Prof. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508;
Dr. Kimmo NISKANEN, Accelerator Laboratory, Department of Physics, University of Jyvaskyla;
Dr. Tanguy PHULPIN, Université Paris-Saclay, CentraleSupélec, CNRS, GeePs, Sorbonne Université;
Dr. Niemat MOULTIF, University of Rouen;
Prof. Pascal DHERBECOURT, University of Rouen;
Dr. Guillaume BASCOUL, Centre National d'Etudes Spatiales (CNES)
4:40 PM
Influence of Implantation Energy on the Microstructure and Resistivity of Phosphorus-Implanted Silicon Carbide during 355 nm Laser Annealing
Mr. Sheng-Han Yu, Institute of Electronics College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan;
Prof. Chih-Shan Tan, Institute of Electronics College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan;
Dr. Kun-Lin Lin, Taiwan Semiconductor Research Institute (TSRI), National Institutes of Applied Research, Taiwan
