Power Devices (Si, SiC, GaN)

Wednesday, October 7, 2026: 4:20 PM-5:00 PM
Dr. Christopher H. Kang, Thermo Fisher Scientific and Prof. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508
4:20 PM
On the Impact of Proton Irradiation on TDDB Reliability of SiC MOSFETs
Prof. Rosine COQ GERMANICUS, Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508; Dr. Kimmo NISKANEN, Accelerator Laboratory, Department of Physics, University of Jyvaskyla; Dr. Tanguy PHULPIN, Université Paris-Saclay, CentraleSupélec, CNRS, GeePs, Sorbonne Université; Prof. Pascal Dherbecourt, University of Rouen; Dr. Niemat Moultif, University of Rouen; Dr. Guillaume Bascoul, Centre National d'Etudes Spatiales (CNES)
4:40 PM
Influence of Implantation Energy on the Microstructure and Resistivity of Phosphorus-Implanted Silicon Carbide during 355 nm Laser Annealing
Dr. Kun-Lin Lin, Taiwan Semiconductor Research Institute (TSRI), National Institutes of Applied Research, Taiwan
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