ISTFA-2026-Conductive AFM Nanoscale Electrical Pathway Analysis of Device failure
ISTFA-2026-Conductive AFM Nanoscale Electrical Pathway Analysis of Device failure
Wednesday, October 7, 2026: 3:20 AM
Summary:
As device dimensions continue to scale into the nanometer regime, conventional electrical fault isolation techniques increasingly struggle to identify localized failure mechanisms, particularly those associated with ultra-low current leakage pathways. In this work, we present an advanced conductive atomic force microscopy (C-AFM)–based fault isolation methodology for nanoscale electrical pathway analysis in failed electronic devices. By combining high-resolution topographical imaging with simultaneous current mapping, the proposed technique enables direct localization and characterization of nanoscale conductive paths responsible for device failure, with sensitivity down to the nanoampere regime. This approach provides a powerful means to isolate failing components that remain undetectable using traditional probing or bulk electrical measurements. The results demonstrate that conductive-AFM offers a robust, non-destructive, and highly localized diagnostic capability, establishing it as an innovative process for failure analysis in next-generation nano electronic devices.
As device dimensions continue to scale into the nanometer regime, conventional electrical fault isolation techniques increasingly struggle to identify localized failure mechanisms, particularly those associated with ultra-low current leakage pathways. In this work, we present an advanced conductive atomic force microscopy (C-AFM)–based fault isolation methodology for nanoscale electrical pathway analysis in failed electronic devices. By combining high-resolution topographical imaging with simultaneous current mapping, the proposed technique enables direct localization and characterization of nanoscale conductive paths responsible for device failure, with sensitivity down to the nanoampere regime. This approach provides a powerful means to isolate failing components that remain undetectable using traditional probing or bulk electrical measurements. The results demonstrate that conductive-AFM offers a robust, non-destructive, and highly localized diagnostic capability, establishing it as an innovative process for failure analysis in next-generation nano electronic devices.