Understanding the Root Cause of Transient Failures in NAND-Type 3D Flash Memory
Understanding the Root Cause of Transient Failures in NAND-Type 3D Flash Memory
Tuesday, October 6, 2026: 1:50 PM
Summary:
In this manuscript, we investigate three classes of transient failures originating from defects located in the row circuits, column circuitry, and peripheral logic—key functional blocks of a NAND-type 3D Flash memory chip outside the memory array. Beginning with the observed failure signatures, we analyze the underlying root causes and explain the physical mechanisms responsible for their transient behaviors.
In this manuscript, we investigate three classes of transient failures originating from defects located in the row circuits, column circuitry, and peripheral logic—key functional blocks of a NAND-type 3D Flash memory chip outside the memory array. Beginning with the observed failure signatures, we analyze the underlying root causes and explain the physical mechanisms responsible for their transient behaviors.