Device Analysis - Case Studies I

Tuesday, October 6, 2026: 12:50 PM-2:50 PM
Mr. Greg Johnson, Carl Zeiss Microscopy and Dr. Yuyan Wang, Texas Instruments
12:50 PM
Material‑Dependent DLS Behavior of Cu‑Void Defects: An Integrated Electrical and Physical Failure Analysis
Mr. Toru Takahashi, Renesas Electronics; Ms. Akiko Hisasue, Renesas Electronics; Mr. Yu Owada, Renesas Electronics; Mr. Ryusei Kikuchi, Renesas Electronics; Mr. Takumi Hasegawa, Renesas Electronics; Mr. Tomohiro Tomizawa, Renesas Electronics; Mr. Shinobu Okanishi, Renesas Electronics; Mr. Junpei Nonaka, Renesas Electronics; Mr. Hiroshi Yanagita, Renesas Electronics
1:10 PM
Analysis of Increasing Leakage in a MnO2 Cathode Tantalum Capacitor over Storage Time
Mr. Keith Harber, Amentum; Mr. Derek Lengacher, NSWC Crane
1:30 PM
Root Cause Analysis of High Speed Automotive SerDes Failures Through Bench Characterization
Mr. Aljude Marilla, Analog Devices Inc.
1:50 PM
Understanding the Root Cause of Transient Failures in NAND-Type 3D Flash Memory
Xiaochen Zhu, Sandisk Technologies Inc; Elliott Rill, Sandisk Technologies Inc; Tao Du, Sandisk Technologies Inc; Lito De La Rama, Sandisk Technologies Inc
2:10 PM
A Multi-Modal Diagnostic Workflow for Marginal Scan Transition Failures in Advanced Logic Devices
Mr. Fei Long Xu, AMD; Mrs. Daisy Lu, AMD; Ms. Jenny Fan, AMD; Dr. Chennian Di, Ph.D., AMD; Mr. Steven Wang, AMD
2:30 PM
Uncovering Doping Defect Through Comprehensive FA Approach
Ms. Jolina May Matibag, Analog Devices General Trias (ADGT); Mr. Raymond G. Mendaros, Analog Devices General Trias (ADGT); Mr. Robin Evangelista, Analog Devices General Trias (ADGT)
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