SEM-based Nanoprobing and Active Voltage Contrast in Advanced GAA Device FA
SEM-based Nanoprobing and Active Voltage Contrast in Advanced GAA Device FA
Tuesday, October 6, 2026: 10:50 AM
205 (Henry B. González Convention Center)
Summary:
Yield improvement in semiconductor technology relies on reducing device defectivity through continuous refinement of the manufacturing process based on accurate failure analysis (FA) results. A successful analysis requires effective fault isolation of an electrical failure. Traditionally, optical beam fault isolation techniques (PEM, OBIRCH, etc) have worked very well for many technological generations. As technology advances with continuously shrinking device dimensions and increasing complexity of architecture, fault isolation demands more stringent resolution beyond the capability of optical beam techniques. In this paper, we present three case studies demonstrating the combination of PEM, SEM-based nanoprobing and active voltage contrast for defect localization in 2nm SRAM peripheral circuitry, Ring Oscillator (RO) 100-inverter chain and frequency divider. Each case study highlights the critical role of nanoprobing specific nodes in circuit blocks at M1, probing isolated devices at S/D contact level, precise localization of the failing site and failure modes, and ultimately leading to determination of the root cause of the failure by cross-sectional TEM and materials analysis.
Yield improvement in semiconductor technology relies on reducing device defectivity through continuous refinement of the manufacturing process based on accurate failure analysis (FA) results. A successful analysis requires effective fault isolation of an electrical failure. Traditionally, optical beam fault isolation techniques (PEM, OBIRCH, etc) have worked very well for many technological generations. As technology advances with continuously shrinking device dimensions and increasing complexity of architecture, fault isolation demands more stringent resolution beyond the capability of optical beam techniques. In this paper, we present three case studies demonstrating the combination of PEM, SEM-based nanoprobing and active voltage contrast for defect localization in 2nm SRAM peripheral circuitry, Ring Oscillator (RO) 100-inverter chain and frequency divider. Each case study highlights the critical role of nanoprobing specific nodes in circuit blocks at M1, probing isolated devices at S/D contact level, precise localization of the failing site and failure modes, and ultimately leading to determination of the root cause of the failure by cross-sectional TEM and materials analysis.