Nanoprobing & Electrical Characterization

Tuesday, October 6, 2026: 10:10 AM-11:00 AM
Dave Albert, IBM and Mr. John Sanders, Thermofisher
10:10 AM
All-In-One Nanoprobing Technique on Advance Technology Node FEOL
Mr. Wai Ming Goh, Qualcomm Global Trading Pte Ltd; Mr. David Zhu, Qualcomm Global Trading Pte Ltd; Mr. Tze Ping Chua, Qualcomm Global Trading Pte Ltd; Grace Tan, Qualcomm Global Trading Pte Ltd; Ms. Moi Kian Yau, Qualcomm Global Trading Pte Ltd; Mr. Chi Eng Chow, Qualcomm Global Trading Pte Ltd; Mr. Seng Hou Chah, Qualcomm Global Trading Pte Ltd
10:30 AM
Evaluating High Speed Pulsed IV Techniques for Resistive Open Via Isolation in Advanced Technology Nodes
Dr. Shang-Yi Lim, Advanced Micro Devices; Vinod Narang, Advanced Micro Devices (S) Pte Ltd
10:50 AM
Gate Oxide rupture isolation using Electron Beam absorbed Current (EBAC) technique on a 22nm device
Mr. Sreenath Arva, Cirrus Logic; Javier terrazas, Cirrus Logic; Eric Faldyn, Cirrus Logic; Tu Southard, Cirrus Logic; Munindhran Rao, Cirrus Logic
11:10 AM
SEM-based Nanoprobing and Active Voltage Contrast in Advanced GAA Device FA
Dr. Jochonia Nxumalo, IBM Research Albany; Dr. Qianheng Du, IBM; Dr. Zhigang Song, IBM; Mr. Michael Iwatake, IBM; Dr. Yu Zhu, IBM; Ms. Shitong Wu, IBM; Dr. Victor Chan, IBM Research Albany; Dr. Chris Sheraw, IBM Research Albany
11:30 AM
Bridging a Gap between Physical and Electrical Failure Analysis: Fault Localization on TEM Lamellae Enabled by Workflow Redesign and optional Probing Pads
Rik Otte, NXP Semiconductors NV; Mr. Claud van Oers, NXP Semiconductors NV; Mr. Leon van Nimwegen, NXP Semiconductors NV; Mr. Gwen Visser, NXP Semiconductors NV; Mr. Benjamin Yuen Sum Lo, NXP Semiconductors NV; Mr. Andy Hsu, NXP Semiconductors NV; Mr. Alan Ling, NXP Semiconductors NV; Mr. Toby Chen, NXP Semiconductors NV
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