Automated High‑Resolution SIMS Nanoanalytics for Advanced Semiconductor Failure Analysis: Overcoming EDS Resolution and Sensitivity Limits
Automated High‑Resolution SIMS Nanoanalytics for Advanced Semiconductor Failure Analysis: Overcoming EDS Resolution and Sensitivity Limits
Wednesday, October 7, 2026: 10:40 PM
Summary:
Advanced semiconductor nodes demand nanoscale chemical analysis capabilities beyond the limits of conventional EDS. This work presents automated magnetic sector SIMS using IONMASTER, delivering hyperspectral imaging with sub‑20 nm lateral resolution and high ion transmission for sensitive detection of trace elements and isotopes in complex three‑dimensional structures. Integration of GDS‑ and KLARF‑based navigation enables automated ROI localization, ensuring precise targeting of buried and low‑contrast features while minimizing operator dependency. High‑sensitivity, nanometer‑repeatable depth profiling supports robust process control. Application examples demonstrate isotopic mapping in CMOS stacks, detection of residues in vias not visible by SE imaging, and 3D reconstruction of subsurface contamination, highlighting the value of automated SIMS for modern failure analysis and semiconductor metrology
Advanced semiconductor nodes demand nanoscale chemical analysis capabilities beyond the limits of conventional EDS. This work presents automated magnetic sector SIMS using IONMASTER, delivering hyperspectral imaging with sub‑20 nm lateral resolution and high ion transmission for sensitive detection of trace elements and isotopes in complex three‑dimensional structures. Integration of GDS‑ and KLARF‑based navigation enables automated ROI localization, ensuring precise targeting of buried and low‑contrast features while minimizing operator dependency. High‑sensitivity, nanometer‑repeatable depth profiling supports robust process control. Application examples demonstrate isotopic mapping in CMOS stacks, detection of residues in vias not visible by SE imaging, and 3D reconstruction of subsurface contamination, highlighting the value of automated SIMS for modern failure analysis and semiconductor metrology