Microwave Induced Plasma Etching for Selective Organic and Silicon Deprocessing in Advanced Packaging
Microwave Induced Plasma Etching for Selective Organic and Silicon Deprocessing in Advanced Packaging
Thursday, October 8, 2026: 9:00 AM
Summary:
The current study demonstrates a dual-mode MIP dry etching process providing a highly selective and damage-free materials deprocessing solution for advanced semiconductor packages. By utilizing an O2 + Ar chemistry to volatilize complex organics and an Ar + O2 + CF4 mixture for the chemically driven etching of bulk silicon, the process successfully preserves delicate underlying structures such as Cu pads and SiO2 dielectrics. This methodology overcomes mechanical stress and unintended damage occurring with conventional RIE and offers a reliable sample preparation pathway critical for the advanced packaging and Si device failure analysis.
The current study demonstrates a dual-mode MIP dry etching process providing a highly selective and damage-free materials deprocessing solution for advanced semiconductor packages. By utilizing an O2 + Ar chemistry to volatilize complex organics and an Ar + O2 + CF4 mixture for the chemically driven etching of bulk silicon, the process successfully preserves delicate underlying structures such as Cu pads and SiO2 dielectrics. This methodology overcomes mechanical stress and unintended damage occurring with conventional RIE and offers a reliable sample preparation pathway critical for the advanced packaging and Si device failure analysis.