Low noise STEBIC on low resistive samples
Low noise STEBIC on low resistive samples
Thursday, October 8, 2026: 10:40 AM
Summary:
STEBIC has raised interest in semiconductor industry as it provides direct access to internal fields and fundamental parameters like diffusion length of minority charge carriers and the width of the depletion region of semiconducting devices. To apply STEBIC, lamella preparation can be challenging. Structural defects like amorphous top layers, metal spray and ion implementation lead to parallel resistances , which introduce increasing low frequency noise with decreasing resistance in STEBIC measurements. Here we present a novel low-resistance dedicated preamplifier module, that enables low noise STEBIC measurements on lamellas with low parallel resistances. This saves time-consuming multi-iteration preparation and reduces the preparational effort to its minimum.
STEBIC has raised interest in semiconductor industry as it provides direct access to internal fields and fundamental parameters like diffusion length of minority charge carriers and the width of the depletion region of semiconducting devices. To apply STEBIC, lamella preparation can be challenging. Structural defects like amorphous top layers, metal spray and ion implementation lead to parallel resistances , which introduce increasing low frequency noise with decreasing resistance in STEBIC measurements. Here we present a novel low-resistance dedicated preamplifier module, that enables low noise STEBIC measurements on lamellas with low parallel resistances. This saves time-consuming multi-iteration preparation and reduces the preparational effort to its minimum.