On the Impact of Proton Irradiation on TDDB Reliability of SiC MOSFETs

Wednesday, October 7, 2026: 4:20 PM
Prof. Rosine COQ GERMANICUS , Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508, Caen, Caen, France
Dr. Kimmo NISKANEN , Accelerator Laboratory, Department of Physics, University of Jyvaskyla, Jyvaskyla, Finland
Dr. Tanguy PHULPIN , Université Paris-Saclay, CentraleSupélec, CNRS, GeePs, Sorbonne Université, Paris, France
Prof. Pascal Dherbecourt , University of Rouen, Saint-Étienne-du-Rouvray, Normandy, France
Dr. Niemat Moultif , University of Rouen, Saint-Étienne-du-Rouvray, Normandy, France
Dr. Guillaume Bascoul , Centre National d'Etudes Spatiales (CNES), Toulouse, France

Summary:

The present work aims to evaluate the impact of 200 meV proton irradiation on TDDB in SiC MOSFETs using Constant Voltage Stress (CVS) measurements. After proton irradiation, SiC MOSFET devices were classified based on the occurrence of catastrophic Single-Event Burnout (SEB). Constant Voltage Stress (CVS) measurements were then employed to evaluate the Time-Dependent Dielectric Breakdown (TDDB) characteristics of the surviving population. A comparison between the electrical behavior of radiation-induced failures and TDDB of irradiated but survived devices, is proposed.
See more of: Power Devices (Si, SiC, GaN)
See more of: Technical Program