On the Impact of Proton Irradiation on TDDB Reliability of SiC MOSFETs

Wednesday, October 7, 2026: 4:20 PM
206 A-B (Henry B. González Convention Center)
Prof. Rosine COQ GERMANICUS , Normandie Univ, Ensicaen, Unicaen, CNRS, CRISMAT UMR6508, Caen, Caen, France
Dr. Kimmo NISKANEN , Accelerator Laboratory, Department of Physics, University of Jyvaskyla, Jyvaskyla, Finland
Dr. Tanguy PHULPIN , Université Paris-Saclay, CentraleSupélec, CNRS, GeePs, Sorbonne Université, Paris, France
Dr. Niemat MOULTIF , University of Rouen, Saint-Étienne-du-Rouvray, Normandy, France
Prof. Pascal DHERBECOURT , University of Rouen, Saint-Étienne-du-Rouvray, Normandy, France
Dr. Guillaume BASCOUL , Centre National d'Etudes Spatiales (CNES), Toulouse, France

Summary:

The present work aims to evaluate the impact of 200 MeV proton irradiation on Time-Dependent Dielectric Breakdown in SiC MOSFETs using Constant Voltage Stress (CVS) measurements. After proton irradiation, commercial SiC MOSFET devices were classified based on the occurrence of catastrophic Single-Event Burnout (SEB). Constant Voltage Stress (CVS) measurements were then employed to evaluate the Time-Dependent Dielectric Breakdown (TDDB) characteristics of the surviving population. A comparison between the electrical behavior of radiation-induced failures and TDDB of irradiated but survived devices, is proposed.
See more of: Power Devices (Si, SiC, GaN)
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